New Material Technologies in AlGaN/GaN Based Electronic Devices
i) Application of GaN bulk crystals with dislocation density as low as 104 cm-2as substrates to construct HEMTs and power devices. Schottky diodes with an ultra low leakage and high breakdown voltage (above 700 V) will be demonstrated. Fig. 1
shows the I-V characteristics for such diode.
ii) Lateral patterning of SiC substrates to modify locally the offcut. This approach has an advantage of paving the way to monolithically integrated GaN-based and SiC-based devices, as they deserve a different substrate off-cut (0.3 and 4 degrees, respectively).
iii) Lateral patterning of SiC and GaN substrates to get atomically smooth areas, as well as much higher concentration of Al in AlGaN layers avoiding cracking and other defect generation.