Q3 GaN and SiC Power Technologies 4

Lead Organizer: Krishna Shenai (Argonne National Laboratory)

Co-organizers: Mietek Bakowski (Acreo Swedish ICT) , Michael Dudley (Stony Brook University) and N. Ohtani (Kwansei Gakuin University)

Monday, 6 October 2014

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10:00-12:00


Plenary Session I
Expo Center, 1st Floor, Universal 20
Chair(s): Michael Dudley and Mietek Bakowski

13:00-14:00


Plenary Session II
Expo Center, 1st Floor, Universal 20
Chair(s): Krishna Shenai and N. Ohtani

14:30-15:50


SiC Power MOSFETs - Reliability and Modeling
Expo Center, 1st Floor, Universal 20
Chair(s): Aris Christou and Karl D Hobart

16:00-17:30


Special Session - WBG Workforce Development (University Perspective)
Expo Center, 1st Floor, Universal 20
Chair(s): Krishna Shenai and Tanya Gachovska

Tuesday, 7 October 2014

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08:20-09:40


SiC Material Growth and Characterization
Expo Center, 1st Floor, Universal 20
Chair(s): Aivars Lelis and N. Ohtani

10:10-11:50


GaN Materials and Power Devices
Expo Center, 1st Floor, Universal 20
Chair(s): Manijeh Razeghi and Aris Christou

14:00-16:20


Material Defects and Their Impact
Expo Center, 1st Floor, Universal 20
Chair(s): Michael Dudley and Mietek Bakowski

16:30-18:00


Special Session - Work Force Development (Industry Perspective)
Expo Center, 1st Floor, Universal 20
Chair(s): Krishna Shenai and Tanya Gachovska

Wednesday, 8 October 2014

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08:20-09:40


GaN Materials and Devices
Expo Center, 1st Floor, Universal 20
Chair(s): Mietek Bakowski and N. Ohtani

10:10-11:10


SiC Materials and Power Devices
Expo Center, 1st Floor, Universal 20
Chair(s): Aris Christou and Liping Guo

11:10-11:30


Closing Remarks
Expo Center, 1st Floor, Universal 20
Chair(s): Krishna Shenai and Mietek Bakowski