Plenary Session I

Monday, 6 October 2014: 10:00-12:00
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Michael Dudley and Mietek Bakowski
10:00
Medium Voltage Hybrid Si IGBT/SiC JBS Diode Module Development
K. D. Hobart, E. A. Imhoff (Naval Research Laboratory), and B. Ray (Bloomsburg University of Pennsylvania)
11:00
Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices
Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, D. Okamoto, M. Sometani, T. Deguchi, S. Harada, Y. Tanaka, S. Matsunaga, T. Hatakeyama, M. Okamoto, M. Yoshikawa, N. Oose, M. Ryo, H. Kimura, M. Miyajima (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST), N. Kumagai, M. Takei (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST, Corporate R&D Headquarters, Fuji Electric Co. Ltd.), M. Arai (New Japan Radio Co. Ltd.), K. Takao (Toshiba Corporation Corporate Research & Development Center), T. Izumi, T. Hayashi, K. Nakayama, K. Asano (Power Engineering R&D Center, Kansai Electric Power Co., Inc.), A. Otsuki (Corporate R&D Headquarters, Fuji Electric Co. Ltd.), K. Fukuda, H. Okumura (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST), and T. Kimoto (Department of Electronic Science & Engineering, Kyoto University)
11:20
Status of Large Diameter SiC Single Crystals
G. Ruland, P. Wu, X. Xu, V. Rengarajan, I. Zwieback, A. Gupta, and M. Ramm (II-VI, WBG)
11:40
Multi-Cycle High Temperature Rapid Thermal Annealing for Dislocation Elimination in 4H-SiC Epitaxy
N. A. Mahadik, M. J. Tadjer, R. E. Stahlbush (U. S. Naval Research Laboratory), E. A. Imhoff (U.S. Naval Research Laboratory), and B. Feigelson (U. S. Naval Research Laboratory)