Status of Large Diameter SiC Single Crystals
SiC single crystals grown by sublimation exhibit relatively high dislocation densities and may contain slightly misoriented grains. Defect data will be presented on wafers that have been characterized by etch pit density and X-ray rocking curves and topography. Resistivity was characterized by an eddy current measurement for conducting and capacitive based measurement for semi-insulating substrates. Using these methods a comparison of progress will be provided.
We have achieved stacking fault and micro pipe free wafers with a typical total dislocation density of 6x103 cm-2, TSD density of ~1.2x103 cm-2, and typical BPD density of 5x102 cm-2 in 150mm substrates and 3x102 cm-2 in 100mm substrates. For semi-insulating wafers we have achieved resistivities in excess of 1E11ohms*cm.
 A. Gupta et al., “Status of Large Diameter SiC Single Crystals”, Materials Science Forum, 2012, vol. 717-720, pp. 3-8.