A Critique of Wide Bandgap (WBG) Power Semiconductor Device Datasheets

Monday, 6 October 2014: 10:20
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
K. Shenai (Argonne National Laboratory)
Power switching devices made using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution and conditioning [1]. Although SiC power diodes and power MOSFETs are commercially available for voltage ratings up to 1,700 volts, a careful review of the datasheets suggests severe shortcomings and the need for improved consistency, parameter definition and standardization in order for application engineers to adapt this new technology with trust and confidence. This paper will provide a critique of WBG datasheets with recommendations for specific improvements.

[1] K. Shenai et al, “Current status and emerging trends in wide bandgap (WBG) semiconductor power devices,” ECS J. Solid State Sci. and Tech. 2(8), N3055-N3063, Jul 2013