GaN Materials and Devices

Wednesday, 8 October 2014: 08:20-09:40
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Mietek Bakowski and N. Ohtani
08:20
1991
Investigation on Polarization Induced Electro-Optical Property of GaN LED Using TEM-EBIC Combined with Cathodoluminescenc
M. H. Sheen, S. D. Kim, and Y. Kim (Seoul National University)
08:40
1992
Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices
N. Gosset (GREMI CNRS-Université d'Orléans), J. Ladroue (STMicroelectronics), T. Tillocher (GREMI CNRS/Université d'Orléans), P. Lefaucheux (GREMI CNRS-Université d'Orléans), M. Boufnichel (STMicroelectronics), and R. Dussart (GREMI CNRS-Université d'Orléans)
09:00
1993
Study of Ti-Rich and Al-Rich Contact Metallization for AlGaN/GaN HEMT Power Devices
D. Bertrand, M. Fayolle, A. Torres (CEA-LETI), E. Blanquet, and F. Volpi (SIMaP)
09:20
1994
Characterization of GaN Switches for Solar Invertors
T. Gachovska, N. Radimov, C. Gerolami (Solantro Semiconductor Corp.), R. Orr (aSolantro Semiconductor Corp.), J. L. Hudgins (University of Nebraska), and K. Shenai (Argonne National Laboratory)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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