GaN Materials and Devices

Wednesday, 8 October 2014: 08:20-09:40
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Mietek Bakowski and N. Ohtani
Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices
N. Gosset (GREMI CNRS-Université d'Orléans), J. Ladroue (STMicroelectronics), T. Tillocher (GREMI CNRS/Université d'Orléans), P. Lefaucheux (GREMI CNRS-Université d'Orléans), M. Boufnichel (STMicroelectronics), and R. Dussart (GREMI CNRS-Université d'Orléans)
Study of Ti-Rich and Al-Rich Contact Metallization for AlGaN/GaN HEMT Power Devices
D. Bertrand, M. Fayolle, A. Torres (CEA-LETI), E. Blanquet, and F. Volpi (SIMaP)
Characterization of GaN Switches for Solar Invertors
T. Gachovska, N. Radimov, C. Gerolami (Solantro Semiconductor Corp.), R. Orr (aSolantro Semiconductor Corp.), J. L. Hudgins (University of Nebraska), and K. Shenai (Argonne National Laboratory)