SiC Material Growth and Characterization

Tuesday, 7 October 2014: 08:20-09:40
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Aivars Lelis and N. Ohtani
08:20
1972
Innovative Solutions to Materials Challenges for High-Voltage SiC Power Devices
D. K. Gaskill, R. L. Myers-Ward, P. B. Klein, N. A. Mahadik, R. E. Stahlbush, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
08:40
1973
Stacking Fault Formation during Homo-Epitaxy of 4H-SiC
H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar, M. Dudley (Stony Brook University), J. Zhang, G. Chung, B. Thomas, E. K. Sanchez, S. Mueller, D. Hansen, and M. Loboda (Dow Corning Compound Semiconductor Solutions)
09:00
1974
Thermodynamics and Kinetics of SiC CVD Epitaxy
A. Yanguas-Gil and K. Shenai (Argonne National Laboratory)
09:20
1975
Characterization of Defects in SiC Substrates and Epilayers
H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar, M. Dudley (Stony Brook University), J. Zhang, G. Chung, B. Thomas, E. K. Sanchez, S. Mueller, D. Hansen, and M. Loboda (Dow Corning Compound Semiconductor Solutions)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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