Material Defects and Their Impact

Tuesday, 7 October 2014: 14:00-16:20
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Michael Dudley and Mietek Bakowski
14:00
1981
On the Power-Handling Capability of Wide Bandgap (WBG) Semiconductor Power Switching Devices
K. Shenai (Argonne National Laboratory)
14:20
1982
Direct Observation of Bandgap Shift in the Dislocations Using High Resolution Cathodoluminescence in Transmission Electron Microscopy
S. D. Kim (Seoul National University), S. Y. Kwon (Ulsan National Institute of Science and Technology), M. H. Sheen, and Y. Kim (Seoul National University)
14:40
1983
GaN/Si(111) Device Defects and Degradation Mechanisms
A. Christou and D. Shahin (University of Maryland)
15:00
1984
Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar, M. Dudley (Stony Brook University), J. Zhang, G. Chung, B. Thomas, E. K. Sanchez, S. Mueller, D. Hansen, and M. Loboda (Dow Corning Compound Semiconductor Solutions)
15:20
1985
Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes
T. Gachovska (Solantro Semiconductor Corp.) and J. L. Hudgins (University of Nebraska)
15:40
1986
PECVD and Thermal Gate Oxides on 3C vs. 4H SiC – Impact on Leakage, Traps and Energy Offsets
T. Gutt, H. M. Przewlocki, K. Piskorski (Institute of Electron Technology), A. Mikhaylov, and M. Bakowski (Acreo Swedish ICT)
16:00
1987
Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Oxidation on C-Face 4H-SiC
T. Sasago, S. Yamahori, and H. Nohira (Tokyo City University)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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