SiC Materials and Power Devices

Wednesday, 8 October 2014: 10:10-11:10
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Aris Christou and Liping Guo
10:10
1995
Accurate Estimation of Switching Losses in SiC Power MOSFET’s
A. Pozo Arribas, M. Krishnamurthy (Illinois Institute of Technology), and K. Shenai (Argonne National Laboratory)
10:30
1996
High-Heat-Resistance Polymers for SiC Power Modules
A. Takahashi (Yokohama National University)
10:50
1997
Full Epitaxial Trench Type Buried Grid SiC JBS Diodes
S. A. Reshanov, A. Schöner, W. Kaplan, A. Zhang (Ascatron AB), J. K. Lim, and M. Bakowski (Acreo Swedish ICT)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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