Point and Extended Defects

Wednesday, 8 October 2014: 10:00-12:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Eddy Simoen and Andre Stesmans
(Invited) Single Dislocations as Nanostructure Devices: Physics and Applications
M. Reiche (Max Planck Institute of Microstructure Physics), M. Kittler (Joint Lab IHP/BTU), H. Uebensee (CIS Research Institute of Microsensorics and Photovoltaics), E. Pippel, and W. Erfurth (Max Planck Institute of Microstructure Physics)
Temperature Dependent Young's Modulus of Si and Ge
J. Vanhellemont (Ghent University), A. K. Swarnakar, and O. Van der Biest (KU Leuven)
(Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures
A. Stesmans, S. Nguyen (Department of Physics, University of Leuven), and V. V. Afanas'ev (University of Leuven)
Invited; Light Induced Degradation in Compensated B-Doped Czochralski Silicon
D. Yang (Zhejiang University, State Key Lab of Silicon Materials)
Concluding Remarks