Point and Extended Defects

Wednesday, 8 October 2014: 10:00-12:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chairs:
Eddy Simoen and Andre Stesmans
10:00
1663
(Invited) Single Dislocations as Nanostructure Devices: Physics and Applications
M. Reiche (Max Planck Institute of Microstructure Physics), M. Kittler (Joint Lab IHP/BTU), H. Uebensee (CIS Research Institute of Microsensorics and Photovoltaics), E. Pippel, and W. Erfurth (Max Planck Institute of Microstructure Physics)
10:40
1664
Temperature Dependent Young's Modulus of Si and Ge
J. Vanhellemont (Ghent University), A. K. Swarnakar, and O. Van der Biest (KU Leuven)
11:00
1665
(Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures
A. Stesmans, S. Nguyen (Department of Physics, University of Leuven), and V. V. Afanas'ev (University of Leuven)
11:40
1666
Invited; Light Induced Degradation in Compensated B-Doped Czochralski Silicon
D. Yang (Zhejiang University, State Key Lab of Silicon Materials)
12:20
Concluding Remarks
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>