SiC Power MOSFETs - Reliability and Modeling

Monday, 6 October 2014: 14:30-15:50
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Aris Christou and Karl D Hobart
Reliability of Commercially Available SiC Power MOSFETs
A. Lelis, R. Green, M. El, and D. Habersat (U.S. Army Research Laboratory)
Progress in SiC MOSFET Reliability
J. D. Flicker, D. R. Hughart, S. Atcitty, R. J. Kaplar, and M. Marinella (Sandia National Laboratories)
A Simple and Accurate Circuit Simulation Model for High-Voltage SiC Power MOSFETs
A. Pozo Arribas, M. Krishnamurthy (Illinois Institute of Technology), and K. Shenai (Argonne National Laboratory)
High, Low, and Zero Field Spin Dependent Recombination in 4H SiC Metal Oxide Semiconductor Field Effect and Bipolar Junction Transistors
P. M. Lenahan (Pennsylvania State University), C. Cochrane (JPL/California Instituter of Technology), and A. Lelis (U.S. Army Research Laboratory)