SiC Power MOSFETs - Reliability and Modeling

Monday, 6 October 2014: 14:30-15:50
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Aris Christou and Karl D Hobart
14:30
1965
Reliability of Commercially Available SiC Power MOSFETs
A. Lelis, R. Green, M. El, and D. Habersat (U.S. Army Research Laboratory)
14:50
1966
Progress in SiC MOSFET Reliability
J. D. Flicker, D. R. Hughart, S. Atcitty, R. J. Kaplar, and M. Marinella (Sandia National Laboratories)
15:10
1967
A Simple and Accurate Circuit Simulation Model for High-Voltage SiC Power MOSFETs
A. Pozo Arribas, M. Krishnamurthy (Illinois Institute of Technology), and K. Shenai (Argonne National Laboratory)
15:30
1968
High, Low, and Zero Field Spin Dependent Recombination in 4H SiC Metal Oxide Semiconductor Field Effect and Bipolar Junction Transistors
P. M. Lenahan (Pennsylvania State University), C. Cochrane (JPL/California Instituter of Technology), and A. Lelis (U.S. Army Research Laboratory)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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