GeSn Session 2: GeSn Epitaxy 2

Thursday, 9 October 2014: 10:05-11:35
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chair:
Benjamin Vincent
10:05
1834
(Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima (Nagoya University)
10:35
1835
Characterization of Ge1-x-ySixSny Ternary Alloys – Comparison of UHV-CVD and Gas Source MBE Growth
B. Claflin, A. Kiefer (Air Force Research Laboratory, Sensors Directorate), R. Beeler (Department of Chemistry and Biochemistry, and Department of Physics, Arizona State University), Z. Q. Fang (Wright State University), and G. Grzybowski (Solid State Scientific Corporation)
10:55
1836
Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates
K. Kostecki, M. Oehme, R. Koerner (University of Stuttgart), D. Widmann (Institute for Semiconductor Engineering), M. Gollhofer, S. Bechler (University of Stuttgart), G. Mussler, D. Buca (Forschungszentrum Juelich), E. Kasper, and J. Schulze (University of Stuttgart)
11:15
1837
Low Temperature Geometrically Confined Growth of Pseudo Single Crystalline GeSn on Amorphous Layers for Advanced Optoelectronics
H. Li, J. Brouillet, A. Salas, I. Chaffin, X. Wang, and J. Liu (Dartmouth College)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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