GeSn Session 2: GeSn Epitaxy 2

Thursday, 9 October 2014: 10:05-11:35
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Benjamin Vincent
(Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima (Nagoya University)
Characterization of Ge1-x-ySixSny Ternary Alloys – Comparison of UHV-CVD and Gas Source MBE Growth
B. Claflin, A. Kiefer (Air Force Research Laboratory, Sensors Directorate), R. Beeler (Department of Chemistry and Biochemistry, and Department of Physics, Arizona State University), Z. Q. Fang (Wright State University), and G. Grzybowski (Solid State Scientific Corporation)
Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates
K. Kostecki, M. Oehme, R. Koerner (University of Stuttgart), D. Widmann (Institute for Semiconductor Engineering), M. Gollhofer, S. Bechler (University of Stuttgart), G. Mussler, D. Buca (Forschungszentrum Juelich), E. Kasper, and J. Schulze (University of Stuttgart)