GeSn Session 3:  GeSn Devices and Characterization

Thursday, 9 October 2014: 12:50-14:40
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
Benjamin Vincent and Y. C. Yeo
12:50
1842
(Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation
X. Gong, Y. Yang, P. Guo, W. Wang, R. Cheng, L. Wang, E. S. Tok, and Y. C. Yeo (National University of Singapore)
13:20
1843
Optical and Electronic Propreties of GeSn and GeSiSn Heterostructures and Nanowires
A. Attiaoui and O. Moutanabbir (Department of Engineering Physics, École Polytechnique de Montréal)
13:40
1844
Stability of Pseudomorphic and Compressively Strained Ge1-XSnx Thin Films under Rapid Thermal Annealing
B. R. Conley, A. Mosleh, S. A. Ghetmiri, W. Du (University of Arkansas), G. Sun, R. Soref (University of Massachusetts Boston), J. Margetis, J. Tolle (ASM America), H. A. Naseem, and S. Q. Yu (University of Arkansas)
14:00
1845
Investigation on the Formation and Propagation of Defects in GeSn Thin Films
A. Mosleh, M. Benamara, S. A. Ghetmiri, B. R. Conley (University of Arkansas), M. A. Alher (University of Karbala, Karbala, Iraq), W. Du (University of Arkansas), G. Sun, R. Soref (University of Massachusetts Boston), J. Margetis, J. Tolle (ASM America), S. Q. Yu, and H. A. Naseem (University of Arkansas)
14:20
1846
In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability
J. H. Fournier-Lupien, D. Chagnon (Department of Engineering Physics, École Polytechnique de Montréal), P. Lévesque (Department of Chemistry, Université de Montréal), A. A. AlMutairi (Department of Engineering Physics, École Polytechnique de Montréal), S. Wirths (Forschungszentrum Juelich), E. Pippel (Max Planck Institute of Microstructure Physics), G. Mussler (Forschungszentrum Juelich), J. M. Hartmann (University of Grenoble - Alpes), S. Mantl, D. Buca (Forschungszentrum Juelich), and O. Moutanabbir (Department of Engineering Physics, École Polytechnique de Montréal)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
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