Strain 2

Thursday, 9 October 2014: 12:50-13:40
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Chairs:
Atsushi Ogura and Seiichi Miyazaki
12:50
1847
(Invited) High Ge Content SiGe Thin Films: Growth, Properties and Integration
A. Y. Hikavyy, E. Rosseel, S. K. Dhayalan, L. Witters, H. Mertens, H. Bender, P. Favia, and R. Loo (IMEC)
13:20
1848
Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy
S. Yamamoto (School of Science and Technology, Meiji University), D. Kosemura (Meiji University), S. N. C.M.Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa (School of Science and Technology, Meiji University), K. Usuda (National Institute of Advanced Industrial Science and Technology (AIST)), and A. Ogura (Meiji University)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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