(Invited) High Ge Content SiGe Thin Films: Growth, Properties and Integration
In this contribution we will first discuss the growth of SiGe with high Ge content with different precursors like silane, disilane, germane and digermane (Fig. 1).
Next we will elaborate on relaxation of SiGe thin films (plastic and elastic (Fig. 2)) and SiGe processes selectivity.
Finally we will present the integration of high Ge content SiGe in different types of pMOS transistors: Si FinFETs, strained SiGe core FinFETs, strained SiGe cladding FETs and strained Ge FETs (Fig. 3).
Challenges and possible solutions for different pMOS approaches listed above will be put forward.
The imec core CMOS program members, European commission, local authorities and imec pilot line are acknowledged for their support.
Fig.1 Ge concentration of SiGe grown with different precursors at different temperatures.
Fig.2 An example of elastic relaxation of SiGe caused by too high process temperature.