Emerging Devices and Applications 2: Quantum Effects

Thursday, 9 October 2014: 13:30-14:50
Expo Center, 1st Floor, Universal 11 (Moon Palace Resort)
Chairs:
Joshua E. Goldberger and Roland Kenji Kawakami
13:30
1849
(Invited) Integrating Classical Semiconductor Devices with Si/Sige Quantum Dots
D. R. Ward, R. H. Foote (University of Wisconsin-Madison), J. K. Gamble (Sandia National Laboratories), D. E. Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson (University of Wisconsin-Madison)
14:00
1850
Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy
D. Takeuchi, K. Makihara (Graduate School of Engineering, Nagoya University), A. Ohta (Nagoya University), M. Ikeda (Hiroshima University), and S. Miyazaki (Graduate School of Engineering, Nagoya University)
14:20
1851
(Invited) The Thermoelectric Properties of Ge/SiGe Based Superlattices: from Materials to Energy Harvesting Modules
A. Samarelli, L. Ferre Llin (University of Glasgow), S. Cecchi, J. Frigerio (Politecnico di Milano), T. Etzelstorfer (Johannes Kepler Universität), E. Müller Gubler (ETH Zürich), J. Stangl (Johannes Kepler Universität), D. Chrastina, G. Isella (Politecnico di Milano), and D. Paul (University of Glasgow)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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