Processing 1

Monday, 6 October 2014: 15:55-18:15
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
Marco Lisker and Didier Dutartre
15:55
1770
(Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100)
S. Chiussi, S. Stefanov, A. Benedetti, C. Serra (Universidade de Vigo), D. Buca (Forschungszentrum Juelich), J. Schulze (Institut für Halbleitertechnik), and P. González (Universidade de Vigo)
16:25
1771
Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology
J. O. Borland (J.O.B. Technologies, AIP), M. Sugitani (SEN Corporation), P. Oesterlin (Innovavent), W. Johnson (KLA-Tencor), T. Buyuklimanli, R. Hengstebeck (EAG), E. Kennon, K. S. Jones (University of Florida), and A. Joshi (Active Layer Parametrics)
16:45
1772
(Invited) Challenges and Developments in GeSn Process Technology for Si Nanoelectronics
S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita (Nagoya University)
17:15
1773
Silicon Diffusion Engineering in Rapid Melt Growth of Silicon-Germanium on Insulator
C. G. Littlejohns, F. Y. Gardes, M. Nedeljkovic, G. Z. Mashanovich, and G. T. Reed (University of Southampton)
17:35
1774
Electrical and Microstructural Characterization of Cu-Germanide Contacts Formed on p-Type Ge Substrate
Y. R. Lim, Y. J. Lee, M. S. Kang, C. H. Leem, I. Jyothi, K. H. Shim, and C. J. Choi (Chonbuk National University)
17:55
1775
Fabrications of Size- Controlled SiGe Nanowires Using I-Line Lithography and Focused Ion Beam Technique
M. Noroozi, A. Ergül, A. Abedin, M. Toprak, and H. H. Radamson (KTH Royal Institute of Technology)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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