Joint Epitaxy & Related Compounds 1: III-V Compounds

Wednesday, 8 October 2014: 10:25-12:05
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Chairs:
A. Hikaviv and Masahiko Hata
10:25
1811
Influence of Trench Width on III-V Nucleation during InP Selective Area Growth on Patterned Si(001) Substrate
S. Jiang (IMEC, K.U.Leuven), C. Merckling, A. Moussa, W. Guo, N. Waldron, M. Caymax (IMEC), W. Vandervorst (IMEC, KU Leuven), M. Seefeldt (K.U.Leuven), and M. Heyns (IMEC, KU Leuven)
10:45
1812
(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density?
C. Merckling, N. Waldron (IMEC), S. Jiang (KU Leuven, IMEC), W. Guo, K. Barla (IMEC), M. Heyns (IMEC, KU Leuven), N. Collaert, A. Thean (IMEC), and W. Vandervorst (IMEC, KU Leuven)
11:15
1813
(Invited) Monolithic Integration of InP Based Structures on Silicon for Optical Interconnects
H. Kataria, W. Metaferia (KTH-Royal Institute of Technology), C. Junesand (Epiclarus AB), Y. T. Sun, and S. Loududoss (KTH-Royal Institute of Technology)
11:45
1814
Fabrication of Relaxed Germanium on Insulator via Room Temperature Wafer Bonding
A. Asadollahi, T. Zabel, G. Roupillard, H. H. Radamson, P. E. Hellström, and M. Östling (KTH Royal Institute of Technology)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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