Joint FET and Strain 1: Germanium FETs

Tuesday, 7 October 2014: 13:20-15:30
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
Y. Yee Chia and Ken Uchida
13:20
1789
(Invited) Gate-All-Around Ge FETs
C. W. Liu (National Taiwan University, National Nano Device Laboratories), Y. T. Chen (National Taiwan University), and S. H. Hsu (National Nano Device Laboratories)
13:50
1790
Plasma Post-Oxidation for High Mobility Strained-Ge pFETs with Aggressively Scaled High-κ Dielectrics
W. Chern (IBM T.J. Watson Research Center, Massachusetts Institute of Technology), P. Hashemi, M. Kobayashi, D. G. Park (IBM T.J. Watson Research Center), and J. L. Hoyt (Massachusetts Institute of Technology)
14:10
1791
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
D. Lu (IBM), P. Morin (STMicroelectronics), B. Sahu (GLOBALFOUNDRIES), T. B. Hook, P. Hashemi, A. Scholze (IBM), B. Kim (Samsung Electronics), P. Kerber, A. Khakifirooz, P. Oldiges, K. Rim, and B. Doris (IBM)
14:40
1792
(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs
K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, K. Usuda, M. Oda, T. Irisawa (National Institute of Advanced Industrial Science and Technology (AIST)), D. Kosemura, A. Ogura (Meiji University), and T. Tezuka (National Institute of Advanced Industrial Science and Technology)
 
1793
Design and Simulation of Ge Based Optically Controlled Field Effect Transistor (Cancelled)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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