Wafer Bonding for MEMS and Packaging

Tuesday, 7 October 2014: 13:00-16:50
Expo Center, 1st Floor, Universal 9 (Moon Palace Resort)
Chairs:
Chuan Seng Tan and Julie Widiez
13:40
(Invited) Wafer-Level Integration of Embedded Cooling Approaches
S. Paredes, Y. Madhour, G. Schlottig, C. L. Ong, and T. Brunschwiler (IBM Research)
14:20
Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for Optoelectronic and MEMS Packaging
E. Higurashi, H. Kawai, T. Suga (The University of Tokyo), S. Okada (Senju Metal Industry Co., Ltd.), and T. Hagihara (Shinko Seiki Co., Ltd.)
14:40
Break
15:00
Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints
K. Schjølberg-Henriksen (SINTEF), N. Malik (SINTEF, University of Oslo), E. V. Gundersen, O. R. Christiansen, K. Imenes (Høgskolen i Buskerud og Vestfold), and S. T. Moe (SINTEF)
15:20
Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding
D. Chagnon, D. Isik (Department of Engineering Physics, École Polytechnique de Montréal), P. Lévesque (Department of Chemistry, Université de Montréal), F. Lewis, M. Caza, X. T. Le, J. S. Poirier, D. Michel, R. Larger (Teledyne DALSA Semiconducteur), and O. Moutanabbir (Department of Engineering Physics, École Polytechnique de Montréal)
15:40
Detailed Investgations of Inner Cavity Pressure of MEMS Devices Sealed by Wafer Bonding
R. Knechtel, S. Dempwolf, and S. Hering (X-FAB MEMS Foundry GmbH Erfurt)
16:00
Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging
M. Wu (Univ. Paris Sud), J. Moulin (Université Paris Sud), G. Agnus (Univ. Paris Sud), and A. Bosseboeuf (CNRS, Univ. Paris Sud)
16:20
Leak Rates and Residual Gas Pressure in Cavities Sealed by Metal Thermo-Compression Bonding and Silicon Direct Bonding
K. Schjølberg-Henriksen (SINTEF), N. Malik (University of Oslo, SINTEF), A. Sandvand (Memscap, HBV), G. Kittilsland (SensoNor), and S. T. Moe (SINTEF)
16:40
Concluding Remarks