Emerging Nanomaterials and Devices 2

Tuesday, 7 October 2014: 13:00-15:00
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Chairs:
Qiliang Li and Helmut Baumgart
13:00
1892
Invited: Electronic Devices Based on Vertical Si Nanowires
H. Yu (South University of Science and Technology of China,)
13:30
1893
Invited: Scaling Mosfets with Self-Aligned Super-Steep-Retrograde-Well
H. Zhu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences)
14:00
1894
Crossover from Band-like to Thermally Activated Charge Transport in Organic Thin-Film Transistors as a Result of Microstress
Y. Mei (Wake Forest University), M. M. Payne (University of Kentucky), C. S. Day (Wake Forest University), J. E. Anthony (University of Kentucky), and O. D. Jurchescu (Wake Forest University)
14:20
1895
Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
T. A. Krauss, F. Wessely, and U. Schwalke (Technische Universität Darmstadt)
14:40
1896
Synthesis and Characterization of CuO Nanotubes (NTs) Formed By Anodization Sonoelectrochemical
P. C. Grez (Instituto de Química, Pontificia Universidad Católica de Valparaíso), L. A. Ballesteros (Pontificia Universidad Católica de Valparaíso), C. E. Celedón (Universidad Técnica Federico Santa María), and R. S. Schrebler (Pontificia Universidad Católica de Valparaíso)
See more of: Q1: Emerging Nanomaterials and Devices
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>