Emerging Nanomaterials and Devices 2

Tuesday, 7 October 2014: 13:00-15:00
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Qiliang Li and Helmut Baumgart
Invited: Electronic Devices Based on Vertical Si Nanowires
H. Yu (South University of Science and Technology of China,)
Invited: Scaling Mosfets with Self-Aligned Super-Steep-Retrograde-Well
H. Zhu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences)
Crossover from Band-like to Thermally Activated Charge Transport in Organic Thin-Film Transistors as a Result of Microstress
Y. Mei (Wake Forest University), M. M. Payne (University of Kentucky), C. S. Day (Wake Forest University), J. E. Anthony (University of Kentucky), and O. D. Jurchescu (Wake Forest University)
Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
T. A. Krauss, F. Wessely, and U. Schwalke (Technische Universität Darmstadt)
Synthesis and Characterization of CuO Nanotubes (NTs) Formed By Anodization Sonoelectrochemical
P. C. Grez (Instituto de Química, Pontificia Universidad Católica de Valparaíso), L. A. Ballesteros (Pontificia Universidad Católica de Valparaíso), C. E. Celedón (Universidad Técnica Federico Santa María), and R. S. Schrebler (Pontificia Universidad Católica de Valparaíso)