Invited: Electronic Devices Based on Vertical Si Nanowires

Tuesday, 7 October 2014: 13:00
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
H. Yu (South University of Science and Technology of China,)
In this work, several electronic devices (e.g. Tunneling FETs and SONOS flash memory) are demonstrated based on vertical Si nanowires manufactured by CMOS process technologies, aiming at ultra-high density applications. The corresponding process technologies and device characteristics will be discussed in this work. Our results suggest that vertical SiNW can be considered as a possible building block for novel electronic devices, especially for sub-10nm technology node.