Optoelectronics 1: Emission

Tuesday, 7 October 2014: 15:45-17:25
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chair:
Gianlorenzo Masini
15:45
1794
Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes
M. El Kurdi (Université Paris Sud), M. Prost (Université Paris Sud, STMicroelectronics), A. Ghrib, X. Checoury, S. Sauvage, N. Zerounian, F. Aniel (Université Paris Sud), G. Beaudoin, I. Sagnes (CNRS), V. Le Thanh (Université Aix Marseille), T. P. K. Luong (University Hong Duc), M. Chaigneau, R. Ossikovski (CNRS-Ecole polytechnique), C. Baudot, F. Boeuf (STMicroelectronics), and P. Boucaud (Université Paris Sud)
16:15
1795
Photoluminescence Study of Si Quantum Dots with Ge Core
K. Makihara, K. Kondo (Nagoya University), M. Ikeda (Hiroshima University), A. Ohta, and S. Miyazaki (Nagoya University)
16:35
1796
(Invited) Light Emission from Highly-Strained Germanium for On-Chip Optical Interconnects
D. Nam, D. S. Sukhdeo (Stanford University), B. R. Dutt (APIC Corporation, PhotonIC Corporation), and K. C. Saraswat (Stanford University)
17:05
1797
Franz-Keldysh Effect in GeSn Detectors
S. Bechler, M. Oehme, O. Latzel, M. Schmid, K. Kostecki, R. Koerner, M. Gollhofer, E. Kasper, and J. Schulze (University of Stuttgart)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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