GeSn Session 1: GeSn Epitaxy 1

Thursday, 9 October 2014: 08:00-09:50
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chair:
Benjamin Vincent
08:00
1826
(Invited) Ge1-xSnx Optical Devices: Growth and Applications
Y. Shimura (IMEC, FWO Pegasus Marie Curie Fellow), W. Wang (IMEC), W. Vandervorst (KU Leuven, IMEC), F. Gencarelli (IMEC, KU Leuven), A. Gassenq, G. Roelkens (Ghent University), A. Vantomme (KU Leuven), M. Caymax, and R. Loo (IMEC)
08:30
1827
Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures
S. Wirths (Forschungszentrum Juelich), Z. Ikonic (University of Leeds), N. von den Driesch, G. Mussler (Forschungszentrum Juelich), U. Breuer (Northern Illinois University, Forschungszentrum Juelich), A. Tiedemann, P. Bernardy, B. Holländer, T. Stoica (Forschungszentrum Juelich), J. M. Hartmann (CEA, LETI, MINATEC Campus, University of Grenoble - Alpes), D. Grützmacher, S. Mantl, and D. Buca (Forschungszentrum Juelich)
08:50
1828
Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD
K. Suda, S. Ishihara, N. Sawamoto (Meiji University), H. Machida, M. Ishikawa, H. Sudoh (Gas-phase Growth Ltd.), Y. Ohshita (Toyota Technological Institute), and A. Ogura (Meiji University)
09:10
1829
CVD Growth of GeSnSiC Alloys Using Disilane, Digermane, Tin Tetrachloride and Methylsilane
M. Noroozi, A. Abedin, M. Moeen, M. Östling, and H. H. Radamson (KTH Royal Institute of Technology)
09:30
1830
Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System
J. Margetis (ASM America), S. A. Ghetmiri, W. Du, B. R. Conley, A. Mosleh (University of Arkansas), R. Soref, G. Sun (University of Massachusetts Boston), L. Domulevicz (Wilkes University), H. A. Naseem, S. Q. Yu (University of Arkansas), and J. Tolle (ASM America)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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