GeSn Session 1: GeSn Epitaxy 1

Thursday, 9 October 2014: 08:00-09:50
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Benjamin Vincent
(Invited) Ge1-xSnx Optical Devices: Growth and Applications
Y. Shimura (IMEC, FWO Pegasus Marie Curie Fellow), W. Wang (IMEC), W. Vandervorst (KU Leuven, IMEC), F. Gencarelli (IMEC, KU Leuven), A. Gassenq, G. Roelkens (Ghent University), A. Vantomme (KU Leuven), M. Caymax, and R. Loo (IMEC)
Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures
S. Wirths (Forschungszentrum Juelich), Z. Ikonic (University of Leeds), N. von den Driesch, G. Mussler (Forschungszentrum Juelich), U. Breuer (Northern Illinois University, Forschungszentrum Juelich), A. Tiedemann, P. Bernardy, B. Holländer, T. Stoica (Forschungszentrum Juelich), J. M. Hartmann (CEA, LETI, MINATEC Campus, University of Grenoble - Alpes), D. Grützmacher, S. Mantl, and D. Buca (Forschungszentrum Juelich)
Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD
K. Suda, S. Ishihara, N. Sawamoto (Meiji University), H. Machida, M. Ishikawa, H. Sudoh (Gas-phase Growth Ltd.), Y. Ohshita (Toyota Technological Institute), and A. Ogura (Meiji University)
CVD Growth of GeSnSiC Alloys Using Disilane, Digermane, Tin Tetrachloride and Methylsilane
M. Noroozi, A. Abedin, M. Moeen, M. Östling, and H. H. Radamson (KTH Royal Institute of Technology)
Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System
J. Margetis (ASM America), S. A. Ghetmiri, W. Du, B. R. Conley, A. Mosleh (University of Arkansas), R. Soref, G. Sun (University of Massachusetts Boston), L. Domulevicz (Wilkes University), H. A. Naseem, S. Q. Yu (University of Arkansas), and J. Tolle (ASM America)