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Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System
The Ge1-xSnx alloys and Ge buffer layers presented here were grown in an ASM Epsilon® 2000 Plus chemical vapor deposition (CVD) system This system is ideally suited for the low deposition temperatures required to form these metastable alloys. A specialized growth approach has been adopted to grow the Ge1-xSnx layers at temperatures of less than 450°C.
Material and optical characterization of these alloys indicate that the materials are of high crystal quality. Figure 1 shows a series symmetrical (004) 2θ-ω XRD scans for Ge1-xSnx alloys with Sn contents ranging from 0.5 to 10 at. % in which the perpendicular lattice constant increases with Sn content. Rutherford Backscattering Spectroscopy (RBS) in combination with ion channeling was used to verify the thickness and composition of the alloys as well as to determine substitutionality of the Sn within the Ge lattice (Fig.1). The thickness and composition of these alloys was in close agreement with those obtained from SIMS. Further structural characterization of the Ge1-xSnx alloys was obtained by cross-sectional Transmission Electron Microscopy (XTEM) analysis. Figure 3 shows a bright field XTEM image of a Ge0.93Sn0.07/Ge/Si heterostructure in which no threading defects are observed propagating through the GeSn epilayer. Room temperature photoluminescence studies of the as-deposited alloys show a strong well-defined peak which shifts to lower energy with increasing Sn contents.
Growth of heterostructures with different alloy compositions have also been demonstrated in which abrupt compositional transitions are observed. Optical devices based on these alloys have been fabricated.
References
[1] Y. Chibane et al., J. Appl. Phys. 107, 053512 (2010)
[2] S. Gupta et al., IEDM proceedings (2014)
Fig. 1. ω-2q XRD (004) scans for a series of Ge1-xSnx alloys with x = 0.005 to 0.1 grown on Ge buffered Si.
Fig. 2. RBS random and aligned spectra of Ge0.93Sn0.07 epilayer grown on Ge buffered Si. The low yield observed for the aligned spectra indicates a high degree of crystalline perfection in which the Sn occupies a substitutional lattice site.
Fig. 3. Diffraction contrast image of a Ge0.93Sn0.07 epilayer grown on a Ge buffered Si in which no threading defects are observed penetrating through the GeSn epilayer.