Processing 2

Tuesday, 7 October 2014: 08:00-10:00
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
Shigeaki Zaima and Stefano Chiussi
08:00
1776
(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
M. Lisker, A. Trusch, A. Krüger, M. Fraschke, P. Kulse, S. Marschmeyer, J. Schmidt, C. Meliani, B. Tillack (IHP), N. Weimann, T. Kraemer, I. Ostermay, O. Krüger, T. Jensen, T. Al-Sawaf, V. Krozer, and W. Heinrich (Ferdinand Braun Institut für Höchstfrequenztechnik)
08:30
1777
Temperature Dependent Internal Friction Behavior of Single Crystal Germanium Studied by the Impulse Excitation Technique
A. K. Swarnakar (National Institute of Technology, KU Leuven), O. Van der Biest, J. Van Humbeeck (KU Leuven), and J. Vanhellemont (Ghent University)
08:50
1778
(Invited) “Small Size” Effects in Si-Based Epitaxies for Advanced CMOS Technologies
D. Dutartre, B. Seiss, D. Barge, and N. Loubet (STMicroelectronics)
09:20
1779
Etch Pit Formation on Germanium Alloys by in situ Gaseous Hydrogen Chloride Etching
Y. C. Huang, C. Wang (Applied Materials, Inc.), and Y. Kim (Applied Materials)
09:40
1780
Reduction of RIE Induced Ge Surface Roughness by SF6-CF4 Cyclic Etching Method
X. Ma (Zhejiang University, Nanjing University), R. Zhang, and Y. Zhao (Zhejiang University)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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