Optoelectronics 2:  Photodetection

Thursday, 9 October 2014: 08:20-09:40
Expo Center, 1st Floor, Universal 11 (Moon Palace Resort)
Chair:
Gianlorenzo Masini
08:20
1831
(Invited) Si Waveguide-Integrated High-Speed Ge Photodetector
J. Fujikata, M. Miura, M. Noguchi (PECST, PETRA), and Y. Arakawa (PECST, The University of Tokyo)
08:40
1832
(Invited) Waveguide Germanium PIN Photodiodes for Optical Communication Applications
L. Vivien (University of Paris-Sud), L. Virot (University of Grenoble - Alpes, University of Paris-Sud), J. M. Hartmann (CEA, LETI, MINATEC Campus, University of Grenoble - Alpes), J. M. Fédéli (CEA, LETI, University of Grenoble - Alpes), D. Marris-Morini, E. Cassan (University of Paris-Sud), C. Baudot, and F. Boeuf (STMicroelectronics)
09:10
1833
(Invited) Fabrication of Pure-GaB Ge-on-Si Photodiodes for Well-Controlled 100-pA-Level Dark Currents
A. Sammak (TUDelft), M. Aminian (EPFL), L. Qi, W. B. de Boer (TUDelft), E. Charbon (EPFL, TUDelft), and L. K. Nanver (TUDelft)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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