P7 Poster Session

Tuesday, 7 October 2014: 18:00-20:00
Expo Center, 1st Floor, Center and Right Foyers (Moon Palace Resort)
1798
Structural and Optical Properties of Ge1-XSnx Alloys Grown on GaAs (001) by R. F. Magnetron Sputtering
H. Pérez Ladrón de Guevara (Universidad de Guadalajara), A. G. Rodríguez, H. Navarro-Contreras, and M. A. Vidal (Universidad Autónoma de San Luís Potosí)
1799
A Study on the Sensitivity between Oxygen Radical and Negative Color PR in Exposure Process of CMOS Image Sensor
S. D. Hwang (Samsung Institute of Technology, Samsung Electronics), J. N. Kim, Y. J. Kim, and J. K. Choi (Samsung Electronics)
1800
Low-Temperature Deposition of Thin Si, Ge, and SiGe Films Using Reducing Activity of Ballistic Hot Electrons
N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek (Tokyo University of Agriculture and Technology), B. Gelloz (Nagoya University), N. Mori (Osaka University), and J. Shirakashi (Tokyo University of Agriculture and Technology)
1801
Fermi-Level Depinning of Ge Schottky Junction Using Se Treatment
Y. R. Lim, Y. J. Lee, K. H. Shim, V. Janardhanam, and C. J. Choi (Chonbuk National University)
1802
Fast and Accurate in-Line Monitor of Boron Implantation Energy and Dose by Spectroscopic Ellipsometry
T. Y. Wen, T. W. Lu, Y. R. Wang, C. F. Lin, J. Y. Wu (United Microelectronics Corp. (UMC)), S. J. Chang, S. M. Chiu, C. J. Huang, C. Y. Cheng, J. Cheng, G. Raphael, Z. Jiang, and Z. Tan (KLA-Tencor Corporation)
1803
Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)
H. Murakami, S. Hamada, T. Ono, K. Hashimoto (Hiroshima University), A. Ohta (Nagoya University), H. Hanafusa, S. Higashi (Hiroshima University), and S. Miyazaki (Nagoya University)
1804
Detection of Effect of Strain on the Valence Band Structure of SiGe by HXPES with High Spatial Resolution
S. Yamahori, T. Sasago, T. Sakurai, E. Yonekura, K. Sawano (Tokyo City University), E. Ikenaga (Japan Synchrotoron Radiation Research Institute), and H. Nohira (Tokyo City University)
1805
The Use of Dopants for Defect Monitoring for Silicon-Germanium Ultra-High Vaccuum Chemical Vapor Deposition
R. Hazbun, J. Hart (University of Delaware), J. Nakos, D. Siegel (IBM Microelectronics Division), C. Funch, V. Kaushal, D. S. Hazel (IBM Corporation), and J. Kolodzey (University of Delaware)
1806
Optical Constants Determination of Pseudomorphic Si1-XGex Layers on Si(001), with 0<x<0.54
E. Nolot (CEA, LETI), J. M. Hartmann (CEA, LETI, MINATEC Campus), and J. Hilfiker (J.A. Woollam Co. Inc.)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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