A Study on the Sensitivity between Oxygen Radical and Negative Color PR in Exposure Process of CMOS Image Sensor

Color filter process for CMOS image sensor process is divided into micro-lens and color layers steps.

And the structure of Color layers is made by building up photo resist(PR).

Then, Color is distinguished by color pattern of image sensor after light induced transmits through the pattern built.

So negative PR is generally used for the structural characteristic.

Negative PR needs high-dose which results in deactivation effect by oxygen radical.

In this paper, the experiment was performed to reduce oxygen radical by adding tool in lithography machine.

As a result, PR sensitivity was developed by reducing Oxygen radical and the process in order to pattern by reduced dose was acquired.