2014 ECS and SMEQ Joint International Meeting (October 5-9, 2014): P3 Poster Session

P3 Poster Session

Tuesday, 7 October 2014: 18:00-20:00

Expo Center, 1st Floor, Center and Right Foyers (Moon Palace Resort)

1659

Electrical and Structural Properties of W-Capped Er Ohmic Contact to n-Type in_0.53Ga_0.47As Channel

C. H. Leem, M. S. Kang, Y. J. Lee, Y. R. Lim, K. H. Shim, and C. J. Choi (Chonbuk National University)

1660

Self-Aligned Ni-Germanide Ohmic Contact to n-Type GaAs Substrate for High Mobility III-V Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)

M. S. Kang, C. H. Leem, Y. J. Lee, Y. R. Lim, K. H. Shim, and C. J. Choi (Chonbuk National University)

See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing

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