Plasma Etching Processes

Tuesday, 7 October 2014: 13:40-16:20
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
M. Engelhardt and Dennis W. Hess
Cryogenic Etching of Submicronic Features in Silicon Using Masks Based on Porous Polymer Films
T. Tillocher (GREMI CNRS/Université d'Orléans), A. Vitale (GREMI CNRS/Université d'Orléans, CRMD CNRS/Université d'Orléans), M. Vayer (CRMD CNRS/Université d'Orléans), N. Gosset, P. Lefaucheux (GREMI CNRS-Université d'Orléans), C. Sinturel (CRMD CNRS/Université d'Orléans), M. Boufnichel (STMicroelectronics), and R. Dussart (GREMI CNRS-Université d'Orléans)
Plasma Etch in the Era of Atomic Scale Fidelity
T. Lill, H. Singh, G. Kamarthy, K. J. Kanarik, A. Cohen, A. Eppler, J. Holland, A. Fischer, M. Shen, J. Marks, R. A. Gottscho, and V. Vahedi (Lam Research)
Alternative to H3PO4 for Si3N4 removal by using chemical downstream etching
C. de Buttet (CEA-LETI, ST Microelectronics), O. Gourhant (STMicroelectronics), S. Zoll, and R. Bouyssou (ST Microelectronics)
Ge FET Fabrication by Plasma Etch at 45nm Pitch
A. Milenin (IMEC) and L. Witters (imec)
Etch Challenges for 3D NAND Flash Technology
A. H. Khan, S. Srinivasan, J. Choi, A. Athayde, and R. Achutharaman (Applied Materials)
HfO2 Gate Stack Engineering by Post-Gate Cleaning Using NF3/NH3 Plasma
M. S. Lee (Department of Materials Science and Engineering, Yonsei University), H. J. Oh (BIO-IT Micro Fab Center, Yonsei University), J. H. Lee, I. G. Lee (Department of Materials Science and Engineering, Yonsei University), W. G. Shin, S. Y. Kang (Gen Co. Ltd., Korea), and D. H. Ko (Department of Materials Science and Engineering, Yonsei University)