Low Temperature Wafer Bonding

Wednesday, 8 October 2014: 10:00-12:00
Expo Center, 1st Floor, Universal 9 (Moon Palace Resort)
Chairs:
Mark Goorsky and Takehito Shimatsu
10:00
1748
Room-Temperature Wafer Direct Bonding Using Ne-Beam Surface-Activation
H. Takagi (National Institute of Advanced Industrial Science and Technology (AIST)), Y. Kurashima (National institure of Advanced Industrial Science and Technology (AIST)), and A. Maeda (AIST)
10:20
1749
Surface Inspection of Cu-Cu Non-Thermal Compression Bonding for Wafer-to-Wafer 3D Stacking
D. Kwon (LSI Technology Development Team, System LSI Division, Samsung Electronics Co., Ltd.), Y. U. Song (LSI Technology Development Team, System LSI Division, Samsung Electronics Co.,Ltd), P. Kang (Process Development Team, Semiconductor R&D Center,Samsung Electronics Co., Ltd), T. Oh, C. R. Moon (LSI Technology Development Team, System LSI Division, Samsung Electronics Co.,Ltd), and D. Lee (LSI Technology Development Team, System LSI Division, Samsung Electronics Co., Ltd)
10:40
1750
Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low Temperature Wafer Bonding
R. He, M. Fujino (The University of Tokyo), A. Yamauchi (Bondtech Co., Ltd.), and T. Suga (The University of Tokyo)
11:00
1751
Monolithic Thin Wafer Stacking Using Low Temperture Direct Bonding
J. Burggraf, J. Bravin, H. Wiesbauer, and V. Dragoi (EV Group)
11:20
1752
Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces Fabrication
C. Flötgen, N. Razek, V. Dragoi, and M. Wimplinger (EV Group)
11:40
1753
Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip
F. S. Lo, C. C. Chiang, C. Li, and T. H. Lee (Dept. of Mechanical Engineering, National Central University)
See more of: P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications
See more of: Electronic Materials and Processing
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