Ge-based Devices

Tuesday, 7 October 2014: 10:00-12:00
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chairs:
Giovanni Capellini and Cor Claeys
10:00
1648
(Invited) The Impact of a (Si)Ge Heterojunction on the Analog Performance of Vertical Tunnel FETs 
P. G. D. Agopian (University of Sao Paulo), J. A. Martino (University of São Paulo), A. Vandooren, R. Rooyackers (imec), E. Simoen (Imec), A. Thean (IMEC), and C. Claeys (KU Leuven)
10:40
1649
(Invited) Ge-on-Insulator MOSFETs for High-Performance and 3D-LSI Applications
T. Tezuka, K. Ikeda, Y. Kamata, Y. Kamimuta, K. Usuda, Y. Moriyama, M. Ono, M. Koike, M. Oda, T. Irisawa, E. Mieda, T. Maeda (National Institute of Advanced Industrial Science and Technology (AIST)), W. Jevasuwan (National Institute for Advanced Industrial Science and Technology (AIST)), Y. Kurashima, H. Takagi, K. Furuse, and E. Kurosawa (National Institute of Advanced Industrial Science and Technology (AIST))
11:20
1650
(Invited) Solid Phase Epitaxy of GeSn Alloys on Silicon and Integration in MOSFET Devices
R. R. Lieten (KU Leuven, IMEC, ATMI), T. Maeda (National Institute of Advanced Industrial Science and Technology (AIST)), J. W. Seo (KU Leuven), W. Jevasuwan, H. Hattori, N. Uchida (National Institute for Advanced Industrial Science and Technology (AIST)), S. Miura, M. Tanaka (Yokohama National University), C. Fleischmann (IMEC, KU Leuven), A. Vantomme (KU Leuven), B. C. Johnson (School of Physics, University of Melbourne), and J. P. Locquet (KU Leuven)
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
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