Fundamentals of Wafer Bonding

Monday, 6 October 2014: 10:00-11:50
Expo Center, 1st Floor, Universal 9 (Moon Palace Resort)
Chair:
Hubert Moriceau
10:00
Welcoming Remarks
10:10
1715
(Invited) Glass-Glass Direct Bonding
G. Kalkowski, S. Risse, U. Zeitner, F. Fuchs, R. Eberhardt, and A. Tünnermann (Fraunhofer IOF)
10:50
1716
Fracture Dynamics during the Silicon Layer Transfer of the Smart Cut™ Process
D. Massy (CEA, INAC - France), F. Mazen (CEA, LETI, MINATEC Campus), J. Ragani (CEA, INAC), F. Madeira (CEA, LETI), D. Landru (SOITEC, France), and F. Rieutord (CEA, INAC)
11:10
1717
Contact Behavior among Vertical Aligned Carbon Nanotube Bumps under Compression for Flexible Multilayer Substrates
M. Fujino, H. Terasaka, and T. Suga (The University of Tokyo)
11:30
1718
Nanomechanical Properties of Standard and Strained SOI Films Fabricated by Wafer Bonding and Layer Splitting
M. A. Mamun (Old Dominion University), K. Zhang, H. Baumgart (Applied Research Center at Thomas Jefferson National Accelerator Laboratories), and A. A. Elmustafa (Old Dominion University)
See more of: P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications
See more of: Electronic Materials and Processing
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