Crystal Growth and Point Defects

Monday, 6 October 2014: 10:00-12:00
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chair:
Jan Vanhellemont
10:00
1635
(Invited) Growth of Czochralski Silicon Crystals with Ultralow Carbon Concentrations for High-Power Insulated-Gate Bipolar Transistor Devices
Y. Nagai, S. Nakagawa, M. Higasa, and K. Kashima (GlobalWafers Japan Co., Ltd.)
10:40
1636
Invited; Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon
K. Sueoka, E. Kamiyama (Okayama Prefectural University), and J. Vanhellemont (Ghent University)
11:20
1637
Absolute Value Determination of Vacancy Concentration in Silicon Crystals Using Low-Temperature Ultrasonic Measurements
H. Yamada-Kaneta (Department of Electrical Engineering and Electronics, Kyushu Institute of Technology), K. Okabe (Graduate School of Science and Technology, Niigata University, GlobalWafers Japan Co., Ltd.), M. Akatsu (Graduate School of Science and Technology, Niigata University, Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf), S. Baba (Graduate School of Science and Technology, Niigata University), K. Mitsumoto (Graduate School of Science and Technology, Niigata University, Max Plank Institute for Chemical Physics of Solids), Y. Nemoto, T. Goto (Graduate School of Science and Technology, Niigata University), H. Saito, K. Kashima (GlobalWafers Japan Co., Ltd.), and Y. Saito (Toshiba Corporation)
11:40
1638
Highly Sensitive and Accurate Infrared Absorption Measurement of Carbon Concentration in Si Crystal
N. Inoue (Faculty of Engineering,Tokyo University of Agriculture and Technology), K. Watanabe (Systems Engineering Inc.), H. Seki (Toray Research Center Inc.), H. Uno (S.H.I.Examination & Inspection, Ltd.), H. Oyama (Kumamoto National College of Technology), and Y. Kawamura (Osaka Prefecture University)
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
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