High Mobility Materials and Advanced Devices

Tuesday, 7 October 2014: 08:00-09:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chairs:
Cor Claeys and Giovanni Capellini
08:00
1645
(Keynote) Material Challenges and Opportunities in Ge/III-V Channel MOSFETs
S. Takagi, S. H. Kim, M. Yokoyama, K. Nishi (The University of Tokyo), R. Zhang (Zhejiang University), and M. Takenaka (The University of Tokyo)
08:40
1646
(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method
H. Minari, S. Yoshida, K. Sawada, M. Nakazawa (imec assignee from Sony Corporation), M. Caymax, C. Merckling, N. Waldron, W. Guo, S. Jiang, N. Collaert (IMEC), E. Simoen, D. Lin, and G. Pourtois (imec vzw)
09:20
1647
Profiling of Border Traps at GeSn and High-K Oxide Interface
S. Gupta (IMEC vzw, KU Leuven), E. Simoen (imec vzw), A. Dobri (University of Liege, Belgium), H. Vrielinck, J. Lauwaert (Ghent University), C. Merckling (IMEC), F. Gencarelli (KU Leuven), Y. Shimura (FWO Pegasus Marie Curie Fellow), R. Loo, and M. Heyns (IMEC)
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
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