III-V Wafer Bonding Applications

Monday, 6 October 2014: 15:20-17:50
Expo Center, 1st Floor, Universal 9 (Moon Palace Resort)
Chairs:
Maik Wiemer and Oussama Moutanabbir
15:20
1723
(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm
L. Czornomaz, N. Daix, E. Uccelli, V. Djara, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori (IBM Zurich Research Laboratory), J. M. Hartmann (University of Grenoble - Alpes), and J. Fompeyrine (IBM Zurich Research Laboratory)
16:00
1724
(Invited) Heterogeneously Integrated III-V on Silicon Lasers
B. Ben Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo (CEA, Leti, Minatec Campus)
16:40
1725
Effects of Miscut Substrates on Electrical Conductivity Across InP and GaAs Wafer-Bonded Structures
J. McKay, M. Seal, K. Yeung, M. Jackson (UCLA), and M. S. Goorsky (University of California, Los Angeles)
17:00
1726
Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells
N. Shigekawa, J. Liang, M. Morimoto, and S. Nishida (Graduate School of Engineering, Osaka City University)
17:20
1727
Chemical Mechanical Polishing of III-V Materials for Wafer Bonding Applications
J. McKay (UCLA), M. S. Goorsky (University of California, Los Angeles), D. Chen, and S. Sareminaeini (UCLA)
17:40
Concluding Remarks
See more of: P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications
See more of: Electronic Materials and Processing
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