Oxygen in Silicon

Monday, 6 October 2014: 14:00-16:20
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Robert J Falster
(Invited) Oxygen Precipitation and Defect Generation in Cz Silicon during Second and Millisecond Annealing
G. H. Kissinger, D. Kot, M. A. Schubert (IHP), and A. Sattler (Siltronic AG)
(Invited) Modeling of Oxygen Precipitation in Silicon
S. T. Dunham and B. C. Trzynadlowski (University of Washington)
Precipitation Behaviors of Rapid Thermal Annealing Treated Silicon Wafers under Various Thermal Cycles
D. Lee (SunEdison Semiconductor), T. Kim, S. Park, T. Kim, Y. Lee, E. Park, H. Yeo (MEMC Korea), and R. Falster (MEMC Electronic Materials, Spa)
Proximity Gettering of Copper via Oxygen Precipitates for Silicon-on-Insulator Wafer
J. S. Park, I. H. Kim, G. S. Lee, and J. G. Park (Hanyang University)