Oxygen in Silicon

Monday, 6 October 2014: 14:00-16:20
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chair:
Robert J Falster
14:00
1639
(Invited) Oxygen Precipitation and Defect Generation in Cz Silicon during Second and Millisecond Annealing
G. H. Kissinger, D. Kot, M. A. Schubert (IHP), and A. Sattler (Siltronic AG)
14:40
1640
(Invited) Modeling of Oxygen Precipitation in Silicon
S. T. Dunham and B. C. Trzynadlowski (University of Washington)
15:20
1641
Precipitation Behaviors of Rapid Thermal Annealing Treated Silicon Wafers under Various Thermal Cycles
D. Lee (SunEdison Semiconductor), T. Kim, S. Park, T. Kim, Y. Lee, E. Park, H. Yeo (MEMC Korea), and R. Falster (MEMC Electronic Materials, Spa)
15:40
1642
Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM
D. Kot, G. Kissinger, M. A. Schubert (IHP), and A. Sattler (Siltronic AG)
16:00
1643
Proximity Gettering of Copper via Oxygen Precipitates for Silicon-on-Insulator Wafer
J. S. Park, I. H. Kim, G. S. Lee, and J. G. Park (Hanyang University)
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
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