(Invited) Modeling of Oxygen Precipitation in Silicon

Monday, 6 October 2014: 14:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
S. T. Dunham and B. C. Trzynadlowski (University of Washington)
A model for the precipitation of oxygen and associated dislocation loops in Czochralski-grown silicon will be presented.  Beginning with kinetic rate equations describing the growth and dissolution of oxide precipitates, a reduced model based on the moments of the precipitate size distribution is developed and validated against experimental data.  Comparisons with the full, rate equation-based model show that the reduced version is comparably accurate while requiring significantly less computational power.  The formation of dislocation loops due to silicon interstitial ejection during precipitate growth is modeled using a simple, moment-based approach.