Characterization of Bonded Wafers and Devices Part I

Tuesday, 7 October 2014: 07:50-09:20
Expo Center, 1st Floor, Universal 9 (Moon Palace Resort)
Chair:
Karl D Hobart
07:50
Introductory Remarks
08:00
1728
(Invited) Water Stress Corrosion in Bonded Structures
F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean (CEA, Leti, Minatec Campus), F. Rieutord (CEA, INAC), and H. Moriceau (CEA, Leti, Minatec Campus)
08:40
1729
Surface Characterization for and by Semiconductor Wafer Direct Bonding
R. Knechtel, N. Frohn, and H. Klingner (X-FAB MEMS Foundry GmbH Erfurt)
09:00
1730
AlN-AlN Wafer Bonding and Its Thermal Characteristics
S. Bao (Singapore-MIT Alliance for Research and Technology (SMART), Nanyang Technological University), K. H. Lee (Singapore-MIT Alliance for Research and Technology (SMART)), G. Y. Chong (Nanyang Technological University), E. A. Fitzgerald (Singapore-MIT Alliance for Research and Technology (SMART), Massachusetts Institute of Technology), and C. S. Tan (Nanyang Technological University, Nanyang Technological University)
See more of: P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications
See more of: Electronic Materials and Processing
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