2D Semiconductors

Tuesday, 7 October 2014: 13:30-17:05
Expo Center, 1st Floor, Universal 18 (Moon Palace Resort)
Chairs:
Michel Houssa and Dayeh Shadi
13:30
Award Ceremony
13:40
2101
(Invited) Interaction of Silicene and Germanene with Non-Metallic Substrates
M. Houssa, E. Scalise, B. van den Broek (University of Leuven), A. Lu, G. Pourtois (imec), V. V. Afanas'ev (KU Leuven), and A. Stesmans (Department of Physics, University of Leuven)
14:10
2102
Graphene and 2-Dimensional Materials for Nanoelectronics Applications
M. C. Lemme (University of Siegen)
14:40
2103
(Invited) Doping, Functionalization, and Permeability of Graphene: Insights from First-Principles Studies
L. Tsetseris (National Technical University of Athens), B. Wang, and S. T. Pantelides (Vanderbilt University)
15:10
2104
Electron Device Potential of 2D Crystal Semiconductors
D. Jena (University of Notre Dame)
15:40
Break
15:50
2105
Molecule@MOF: A New Class of Electronic Materials
A. A. Talin (Sandia National Laboratories), V. Stavila (Sandia.National Labs), M. E. Foster (Sandia National Laboratories, Livermore, CA 94551-0969), F. El Gabaly, A. C. Ford, F. Léonard (Sandia National Laboratories), and M. D. Allendorf (Sandia National Laboratories, Livermore, CA 94551-0969)
16:20
2106
Electrical Characteristics of Multilayer MoS2 Transistors at Real Operating Temperatures and Different Ambient Conditions
H. J. Kwon, J. Jang, H. Kang (University of California), S. Kim (Kyung Hee University), V. Subramanian, and C. P. Grigoropoulos (University of California)
16:40
2107
Synthesis of MoS2 Thin Film
J. Mun (Sungkyunkwan University, Korea Research Institute of Standards and Science), D. Kim (Sungkyunkwan University), Y. Shin, J. Yun, S. Kang (Korea Research Institute of Standards and Science), and T. Kim (Sungkyunkwan University)
17:00
Introduction to Poster Paper 40283
See more of: Q7: Semiconductors, Dielectrics, and Metals for Nanoelectronics 12
See more of: Electronic and Photonic Devices and Systems
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