Solid State Reaction to Form Metal Oxide Heterostructure Nanowire

Wednesday, 27 May 2015: 11:40
PDR 7 (Hilton Chicago)
Y. H. Chen (Dep. Materials Science and Engineering, NCTU), C. W. Huang (Dep. of Materials Science and Engineering, NCTU), J. Y. Chan, Y. T. Huang (Dep. Materials Science and Engineering, NCTU), and W. W. Wu (Dep. of Materials Science and Engineering, NCTU)
ZnO nanostructure has been investigated extensively due to its fascinating functional properties. ZnO heterostructure especially attracts a lot attention owing to various kinds of applications such as light-emitting device, resistive random-access memory, and solar cell. In this study, we deposited few nanometer of Al onto ZnO nanowire by electron beam evaporator, and successfully transformed ZnO nanowires into Al2O3/ZnO axial heterostructure. This reaction was occurred through solid state reaction at 700˚C in ultrahigh vacuum transmission electron microscope (UHV-TEM). We directly observed diffusion process during heating; in addition, the analysis of the kinetic behavior was carried out through the in situ video. The structure and composition were also identified by energy dispersive spectrometry (EDS) and Cs-corrected STEM. This research provide a method to fabricate a new type of one dimensional Al2O3/ZnO axial heterostructure, which may be applied in opto-electrical device and nanosensors.