Exploration of Chemical Bonding Transformation Mapping to Assist Low-k Dielectric Nanostructure Fabrication

Wednesday, 27 May 2015: 08:25
PDR 7 (Hilton Chicago)
S. Rimal, T. Mukherjee, A. Goswami, N. Ross, and O. Chyan (University of North Texas)
In leading edge integrated circuit manufacture, reduction of RC time delay by incorporation of porous ultra-low k (ULK) interlayer dielectrics (ILD) into Cu interconnect nanostructure continues to pose major integration challenges. The main challenge is porosity induced to lower the dielectric constant of the ILD has the undesirable side effect of compromising its mechanical and chemical stability. As a result, these materials are more susceptible to the damages caused by RIE plasma etching processes. Besides the challenge of handling weak porous ULK materials, a lack of sensitive metrology to guide systematic development of plasma etching, restoration and cleaning processes is the major stumbling block. To assist in the overall integration effort, we have been actively exploring Multiple Internal Reflection Infrared Spectroscopy (MIR-IR) and associated IR spectroscopic techniques as a sensitive (sub-5nm) characterization tool to assist the fabrication process of ULK nanostructure with targeted critical dimension. In this paper, we will report new findings obtained on chemical bonding modification across fluorocarbon etch residues and low-k dielectric interface after manufacture relevant processing treatments including plasma etching, ashing, UV curing and post-etch cleaning. MIR-IR metrology showed useful spectroscopic details of chemical bonding transformations taking place during plasma etch and strip processing on both blanket and dielectric trench structures. The observed increase of Si-OH and C=O and the decrease of Si-CH3 IR absorption bands correlated well with increasing plasma induced damage, K increases verified by MIS structure, especially for more aggressive stripping process. With functional group-specific chemical derivatization, chemical bonding structure of 1-2 nm post-etch residue on porous low-k trench structure was established. UV-induced modification of fluorocarbon polymer residue to improve its subsequent wet cleaning removal was studied by FTIR, XPS and SEM.  The overall goal is to apply new insights on chemical bonding transformation mapping to achieve cleans-friendly plasma etches on creating ULK dielectric nanostructures with minimal dielectric damages.