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Early Detection of Lung Cancer Using High Electron Mobility Transistors
Figure 1 (a) and (b) show the schematic of AlGaN/GaN HEMT and the top-view of the device. To create a high quality HEMT device, a 3 μm-thick undoped GaN buffer layer and a 150 Å-thick undoped Al0.25Ga0.75N layer were deposited by metal-organic chemical vapor deposition (MOCVD) on the substrate. Mesa isolation was formed by Inductively Coupled Plasma (ICP) etching system for 28 seconds. Ti, Al, Ni and Au were deposited by Electron Beam Evaporation and were annealed at 850 °C for 45 seconds under N2 flowing to form ohmic contacts. Passivation was provided by encapsulating the device with photoresist, with only the gate region open for antibody immobilization using photolithography.
After sensor fabrication, surface functionalization is carried out by thiol binding on gold. We mixed bi-functional thio-carboxylate with the CEA antibody and let the antibody bind with the carboxyl functional group by EDC-sulfo NHS coupling reaction. Then the device is incubated in this solution for 12 hours at 4 ºC. BSA is used for surface blocking and as a protein dilution buffer. For the sensor measurement, source-drain bias is fixed at 0.5 V and the current change induced by binding of CEA was measured by applying a 0.5 V gate voltage.
Figure 1 (c) shows the total charge accumulated for various concentrations of CEA. This can be used as an index to quantify the amount of CEA present in sample as it can distinguish various protein concentrations even in the physiological blood/serum concentration (1x PBS). The change in total charge with varying concentration of CEA can thus represent sensor calibration curve. Comparing to the conventional methods, the electronic detection of CEA using HEMT has the advantages of high sensitivity and low response time. We believe this method has the potential to further the research in the field of electronic biosensors.