Modulation of the Electrostatic and Quantum Capacitance of Few Layered Graphene through Plasma Processing

A comprehensive understanding of the characteristics of graphene¹, with regard to its unique electrical², optical, and structural attributes would be incomplete unless the inevitable presence of defects have been considered. While such imperfections may limit³ the realization of theoretically predicted attributes, they may also be vital for uncovering new fundamental phenomena and their related applications. Here, we show that the charged defect generation, through argon ion based plasma processing, in few layer graphene (FLG) could be integral to the substantial enhancement of the electrical capacitance, and of potential use⁴ in electrochemical (EC) energy storage⁵. By combining EC characterization techniques with detailed Raman spectroscopic analysis, we elucidate the contributions of plasma-induced defects to electrostatic and quantum capacitance.

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