(Invited) Preparation of GaSb Surface for Low Interfacial Trap Density MOS Capacitors
The in-situ approach is conducted in a system equipped with a high vacuum sample transfer tube that connects a molecular beam epitaxy (MBE) tool and an atomic layer deposition (ALD) chamber. A native oxide-free surface can thus be preserved for high-κ dielectrics deposition. HfO2/Al2O3/GaSb MOSCAPs fabricated on Sb-stabilized surface exhibit clear inversion behavior at low frequency and good modulation of the Fermi level across the whole GaSb band gap. Modulation of the inversion capacitance at 100 kHz reaches 30 %, suggesting low Dit as well as low bulk trap density at the interface. The Dit extracted by the conductance method is about 7.6×1011 cm-2eV-1 near the valence band. As to the ex-situ process, air-exposed GaSb samples are treated by hydrogen plasma at room temperature prior to ALD dielectrics. Under optimized plasma treatment conditions, similar C-V characteristics and gate leakage current of HfO2/Al2O3/GaSb MOSCAPs to those of the in-situ ones are observed. Modulation of the inversion capacitance at 100 kHz even reaches 36 % and the Dit near the valence band is as low as 6.0×1011 cm-2eV-1.
Structural and chemical analyses of the dielectric/semiconductor interface by high-resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS) show that the in-situ MOSCAPs have a native oxide-free interface, while hydrogen plasma treatment results in the formation of GaOx, which may serve to passivate defects and dangling bonds at the GaSb surface