Compound Semiconductor Processing

Monday, 25 May 2015: 09:00-11:50
Conference Room 4G (Hilton Chicago)
Yu-Lin Wang and Chih-Fang Huang
(Invited) Preparation of GaSb Surface for Low Interfacial Trap Density MOS Capacitors
C. Y. Chen, W. J. Hsueh, C. M. Chang, H. M. Hsu (National Central University), and J. I. Chyi (Research Center for Applied Sciences, Academia Sinica, National Central University)
Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution
K. Nagao, K. Nakamura (Tohoku University, Sumitomo Electric Industries, Ltd.), A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, and T. Ohmi (Tohoku University)
Annealing Effects on the Electrical Activation of Si Dopants in InGaAs
A. G. Lind, H. L. Aldridge Jr. (University of Florida), C. C. Bomberger (University of Deleware), C. Hatem (Applied Materials), J. M. O. Zide (University of Delaware), and K. S. Jones (University of Florida)