Compound Semiconductor Processing

Monday, 25 May 2015: 09:00-11:50
Conference Room 4G (Hilton Chicago)
Chairs:
Yu-Lin Wang and Chih-Fang Huang
09:00
1401
(Electronics and Photonics Division Award) Dielectrics for III-V Materials
C. R. Abernathy (University of Florida)
09:30
1402
(Invited) Preparation of GaSb Surface for Low Interfacial Trap Density MOS Capacitors
C. Y. Chen, W. J. Hsueh, C. M. Chang, H. M. Hsu (National Central University), and J. I. Chyi (Research Center for Applied Sciences, Academia Sinica, National Central University)
10:00
1403
Invited: Ohmic Contacts to Semiconductor Compounds: From III-V Semiconductors to Layered Transition Metal Dichalcogenides
S. E. Mohney (Penn State)
10:30
Break
10:50
1404
Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution
K. Nagao, K. Nakamura (Tohoku University, Sumitomo Electric Industries, Ltd.), A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, and T. Ohmi (Tohoku University)
11:10
1405
Annealing Effects on the Electrical Activation of Si Dopants in InGaAs
A. G. Lind, H. L. Aldridge Jr. (University of Florida), C. C. Bomberger (University of Deleware), C. Hatem (Applied Materials), J. M. O. Zide (University of Delaware), and K. S. Jones (University of Florida)
11:30
1406
Electrochemical Transfer Doping: A Novel Phenomenon Seen in Diamond, Gallium Nitride, and Carbon Nanotubes
V. Chakrapani (Renssalaer Polytechnic Institute)
See more of: H04: State-of-the-Art Program on Compound Semiconductors 57 (SOTAPOCS 57)
See more of: Electronic and Photonic Devices and Systems
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