(Invited) Anti-Ambipolar, Gate-Tunable p-n Heterojunctions

The recent emergence of two-dimensional (2D) materials has enabled the realization of atomically thin heterostructure devices [1].  Of particular interest are heterojunctions based on p-type and n-type semiconductors since these devices possess non-linear, gate-tunable transport characteristics. Here, we demonstrate a gate-tunable p-n heterojunction diode using thin films of semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS₂) as p-type and n-type semiconductors, respectively [2]. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias over a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10⁴. The transfer characteristic of this p-n heterojunction shows a unique 'anti-ambipolar' behavior with two off-states at either extreme of the gate voltage range and a current maximum in the middle. The continuous transition from positive to negative transconductance in an anti-ambipolar characteristic enables operation of analog communication circuits with a reduced number of circuit components compared to unipolar transistors. Anti-ambipolarity can be widely generalized to heterojunctions of other materials such as s-SWCNTs and n-type amorphous indium gallium zinc oxide (a-IGZO), ultimately leading to all solution processed p-n heterojunctions at the wafer scale [3].

[1] D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, and M. C. Hersam, "Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides," ACS Nano, 8, 1102 (2014).

[2] D. Jariwala, V. K. Sangwan, C.-C. Wu, P. L. Prabhumirashi, M. L. Geier, T. J. Marks, L. J. Lauhon, and M. C. Hersam, "Gate-tunable carbon nanotube-MoS₂ heterojunction p-n diode," Proc. Nat. Acad. Sci. USA, 110, 18076 (2013).

[3] D. Jariwala, V. K. Sangwan, J.-W. T. Seo, W. Xu, J. Smith, C. H. Kim, L. J. Lauhon, T. J. Marks, and M. C. Hersam, "Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors," submitted, 2014.