GaN based Electronics I

Jang, Soohwan

GaN based Electronics I

Monday, 25 May 2015: 08:00-12:00

Conference Room 4C (Hilton Chicago)

Chairs:

Soohwan Jang and Jen-Inn Chyi

08:00

1432

(Invited) Radiation Effects in AlGaN/GaN and InAlN/GaN High Electron Mobility Transistors

S. J. Pearton, Y. H. Hwang, and F. Ren (University of Florida)

08:30

1433

(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

T. J. Anderson, A. D. Koehler (Naval Research Laboratory), P. Specht (University of California, Berkeley), B. D. Weaver (Naval Research Laboratory), J. D. Greenlee (NRC Postdoctoral Fellow Residing at NRL), M. J. Tadjer (U. S. Naval Research Laboratory), J. K. Hite, M. A. Mastro (U.S. Naval Research Laboratory), M. Porter (Naval Postgradute School), M. Wade (Naval Postgraduate School), O. Dubon (University of California, Berkeley), M. Luysberg (Ernst Ruska-Centre, Jülich Research Centre), K. D. Hobart (Naval Research Laboratory), T. R. Weatherford (Naval Postgradute School), and F. J. Kub (Naval Research Laboratory)

09:00

1434

(Invited) Simulation of Radiation Effects in AlGaN/GaN HEMTs

E. Patrick, M. Choudhury, F. Ren, S. J. Pearton, and M. E. Law (University of Florida)

09:30

1435

(Invited) Neutron Irradiation Effect on GaN-Based Materials

M. L. Zhang, R. X. Yang (Hebei University of Technology), X. L. Wang (Institute of Semiconductors, Chinese Academy of Sciences), and S. F. Liu (Hebei University of Technology)

09:50

Break

10:10

1459

In-Situ Characterization of Defect Dynamics in 4H-SiC Power Diodes under High-Voltage Stressing

K. Shenai (LoPel Corporation), B. Raghothamachar, M. Dudley (Stony Brook University), and A. Christou (University of Maryland)

10:40

1437

(Invited) Low Loss Power Conversion with Gallium Nitride Based Devices

S. Chowdhury (Arizona State University)

11:10

1438