Growth and Characterization

Monday, 25 May 2015: 13:30-16:00
Conference Room 4C (Hilton Chicago)
Soohwan Jang and Travis J Anderson
(Invited) Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates
L. Kirste (Fraunhofer Institute for Applied Solid State Physics), A. N. Danilewsky (Institute of Geo- and Environmental Sciences), T. Sochacki (Institute of High Pressure Physics PAS), K. Köhler (Fraunhofer Institute for Applied Solid State Physics), M. Zajac, R. Kucharski (Ammono S.A.), M. Boćkowski (Institute of High Pressure Physics PAS), and P. J. McNally (School of Electronic Engineering)
(Invited) Developing Periodically Oriented Gallium Nitride for Frequency Conversion
J. K. Hite, J. A. Freitas, M. A. Mastro, I. Vurgaftman, J. R. Meyer (U.S. Naval Research Laboratory), C. G. Brown (University Research Foundation), F. J. Kub, S. R. Bowman, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers
A. M. Dabiran, F. Machuca, I. De, and R. Weiss (Tivra Corporation)
Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 Substrates
R. Imai (School of Science and Technology, Meiji University), D. Kosemura (Renewable Energy Res. Labs., Meiji University), and A. Ogura (Meiji University, Renewable Energy Res. Labs., Meiji University)