Growth and Characterization

Monday, 25 May 2015: 13:30-16:00
Conference Room 4C (Hilton Chicago)
Chairs:
Soohwan Jang and Travis J Anderson
13:30
1440
(Invited) Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates
L. Kirste (Fraunhofer Institute for Applied Solid State Physics), A. N. Danilewsky (Institute of Geo- and Environmental Sciences), T. Sochacki (Institute of High Pressure Physics PAS), K. Köhler (Fraunhofer Institute for Applied Solid State Physics), M. Zajac, R. Kucharski (Ammono S.A.), M. Boćkowski (Institute of High Pressure Physics PAS), and P. J. McNally (School of Electronic Engineering)
14:00
1441
Impact of Microstructure and Defects on Surface Reactivity during Wide Bandgap Semiconductor Epitaxy
A. Yanguas-Gil and P. Zapol (Argonne National Laboratory)
14:20
1442
How Predictive Are Reactor-Scale Simulations of Wbg Semiconductor Epitaxy? a Sensibility Analysis of SiC and Nitride Epitaxy Models
A. Yanguas-Gil (Argonne National Laboratory) and K. Shenai (LoPel Corporation)
14:40
Break
14:50
1443
(Invited) Developing Periodically Oriented Gallium Nitride for Frequency Conversion
J. K. Hite, J. A. Freitas, M. A. Mastro, I. Vurgaftman, J. R. Meyer (U.S. Naval Research Laboratory), C. G. Brown (University Research Foundation), F. J. Kub, S. R. Bowman, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
15:20
1444
Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers
A. M. Dabiran, F. Machuca, I. De, and R. Weiss (Tivra Corporation)
15:40
1445
Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 Substrates
R. Imai (School of Science and Technology, Meiji University), D. Kosemura (Renewable Energy Res. Labs., Meiji University), and A. Ogura (Meiji University, Renewable Energy Res. Labs., Meiji University)
See more of: H05: Wide Bandgap Semiconductor Materials and Devices 16
See more of: Electronic and Photonic Devices and Systems
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